BUK210-50Y Datasheet | NXP Semiconductors

DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. QUICK REFERENCE DATA SYMBOL IL SYMBOL VBG IL Tj RON PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25˚C MIN. 9 MAX. 50 20 150 38 UNIT A UNIT V A ˚C mΩ APPLICATIONS .. General controller for driving lamps, motors, solenoids, heaters. FEATURES Vertical power Trench MOS Low on-state resistance CMOS logic patible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET CONTROL & PROTECTION CIRCUITS LOAD GROUND RG INPUT Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT263B-01 PIN 1 2 3 4 5 tab Input Flag Drain Protection supply DESCRIPTION PIN CONFIGURATION mb mb SYMBOL D TOPFET P F I Source Drain Front view MBL267 Fig. 2. Fig. 3. November 2002 Rev 2.000 Philips Semiconductors Product specification Power MOS transistor TOPFET high side switch LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG IL PD Tstg Tj Tsold PARAMETER Continuous supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature1 Lead temperature Reverse battery voltages2 -VBG -VBG Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 Input and status II, IS II, IS Continuous currents Repetitive peak currents Inductive load clamping EBL Non-repetitive clamping energy δ ≤ 0.1, tp = 300...