BUK217-50YT Datasheet | NXP Semiconductors

DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. QUICK REFERENCE DATA SYMBOL VBG IL Tj RON PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25˚C MAX. 50 10 150 14 UNIT V A ˚C mΩ APPLICATIONS .. lamps, motors, General controller for driving solenoids, heaters. FEATURES Vertical power Trench MOS Low on-state resistance CMOS logic patible Very low quiescent current Latched overtemperature protection Load current limiting at reduced level Short circuit load detection Overvoltage and undervoltage shutdown with hysteresis Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET CONTROL & PROTECTION CIRCUITS LOAD GROUND RG INPUT Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT426 PIN 1 2 3 4 5 mb DESCRIPTION Ground Input (connected to mb) Status Load Battery PIN CONFIGURATION mb SYMBOL 3 1 2 4 5 TOPFET HSS Fig. 2. Fig. 3. September 2001 Rev 1.300 Philips Semiconductors Product specification TOPFET high side switch SMD version LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG IL PD Tstg PARAMETER Continuous off-state supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature1 Mounting base temperature Reverse battery voltages2 -VBG -VBG Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 Input and status II, IS II, IS Continuous currents Repetitive peak currents Inductive load clamping EBL Non-repetitive clamping energy δ ≤ 0.1, tp = 300 µs IL = 10 A, VBG = 16 V Tj = 150˚C prior to turn-off -5 -50 to limit input, status...