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BUK6246-75C Datasheet N-channel TrenchMOS intermediate level FET

Manufacturer: NXP Semiconductors

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General Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

1.2

Overview

DP AK BUK6246-75C N-channel TrenchMOS intermediate level FET Rev.

1 — 13 July 2011 Product data sheet 1.

Product profile 1.

Key Features

  • AEC Q101 compliant.
  • Suitable for standard and logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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