BUK6213-30A Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) Trench MOS™ technology. 1.2 Features s Low on-state resistance s 175 °C rated s Q101 pliant s Intermediate level patible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 267 m J s ID ≤ 55 A s RDSon = 10 mΩ (typ) s Ptot ≤ 102 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline [1] Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d mb g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the package. Philips Semiconductors Trench MOS™ Intermediate level FET 3. Ordering information Table 2: Ordering information Package Name BUK6213-30A Description Plastic single-ended surface mounted package Version SOT428 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 55 A; VDS ≤ 30 V; VGS = 10 V; RGS = 50 Ω; starting Tj = 25 °C [1] [2] [1] [2] [1] Conditions RGS = 20 kΩ Min - 55 - 55 - Max 30 30 ±20 64 55 45 257 102 +175 +175 64 55 257 267 Unit V V V A A A A W °C °C A A A m J Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Source-drain diode Avalanche ruggedness [1] [2] Current is limited...