BUK6217-55C Datasheet | NXP Semiconductors

description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for standard and logic level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V Automotive systems - Electric and electro-hydraulic power steering - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 12 A; Tj = 25 °C; see Figure 11 ID = 25 A; VDS = 44 V; VGS = 10 V; see Figure 13; see Figure 14 ID = 44 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min Typ 16 Max 55 44 80 19 Unit V A W mΩ Static characteristics Dynamic characteristics QGD gate-drain charge 11.2 n C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 45 m J NXP Semiconductors N-channel Trench MOS intermediate level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol 2 1 3 DPAK (SOT428) 3. Ordering information Table 3. Ordering information Package Name BUK6217-55C DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number 4. Marking Table 4. Marking codes Marking code BUK6217-55C Type number BUK6217-55C All information...