BUK6213-30C Datasheet | NXP Semiconductors

description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Suitable for standard and logic level gate drives - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V automotive systems - Electric and electro-hydraulic power steering - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 11 Min Typ 11.9 Max Unit 30 47 60 14 V A W mΩ Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive ID = 47 A; Vsup ≤ 30 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 13; see Figure 14 30 m J Dynamic characteristics QGD 4.77 n C NXP Semiconductors N-channel Trench MOS intermediate level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 mb Simplified outline Graphic symbol G mbb076 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Package Name BUK6213-30C DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Produc...