BUK6215-75C Datasheet | NXP Semiconductors

description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - patable with logic and standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V Automotive systems - Electric and electro-hydraulic power steering - Engine management - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain current total power dissipation drain-source on-state resistance Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 75 57 128 V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C Static characteristics RDSon VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 11 12.5 15 mΩ NXP Semiconductors N-channel Trench MOS FET Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 57 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped ID = 25 A; VDS = 60 V; VGS = 10 V; see Figure 13; see Figure 14 Min Typ Max Unit 94 m J Table 1. Symbol EDS(AL)S Avalanche ruggedness Dynamic characteristics QGD 18.8 n C 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 mb Simplified outline Graphic symbol G mbb076 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Package Name BUK6215-75C DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number All information...