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BUK653R5-55C N-Channel MOSFET

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Description

BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev.1 * 27 October 2010 Product data sheet 1.Product profile 1.1 General descriptio.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

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Features

* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources

BUK653R5-55C Distributors

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BUK653R5-55C N-Channel MOSFET NXP Semiconductors
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