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BUK6C3R3-75C Datasheet N-channel TrenchMOS intermediate level FET

Manufacturer: NXP Semiconductors

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General Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotive applications.

1.2

Overview

D2 PA K BUK6C3R3-75C N-channel TrenchMOS intermediate level FET Rev.

3 — 18 January 2012 Product data sheet 1.

Product profile 1.

Key Features

  • AEC Q101 compliant.
  • High current handling capability, up to 320 A.
  • Low conduction losses due to very low on-state resistance.
  • Suitable for standard and logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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