• Part: BUK6C3R3-75C
  • Description: N-channel TrenchMOS intermediate level FET
  • Manufacturer: NXP Semiconductors
  • Size: 188.08 KB
Download BUK6C3R3-75C Datasheet PDF
BUK6C3R3-75C page 2
Page 2
BUK6C3R3-75C page 3
Page 3

BUK6C3R3-75C Key Features

  • AEC Q101 pliant
  • High current handling capability, up to 320 A
  • Low conduction losses due to very low on-state resistance
  • Suitable for standard and logic level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating