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BUK6C3R3-75C

The BUK6C3R3-75C is N-channel TrenchMOS intermediate level FET designed by NXP Semiconductors.

Product Overview

NXP Semiconductors

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BUK6C3R3-75C N-channel TrenchMOS intermediate level FET by NXP Semiconductors - Datasheet Preview — Datasheet preview – BUK6C3R3-75C

Datasheet Details

Part number	BUK6C3R3-75C
Manufacturer	NXP Semiconductors
File Size	188.08 KB
Description	N-channel TrenchMOS intermediate level FET
Datasheet	BUK6C3R3-75C-NXPSemiconductors.pdf
Additional preview pages of the BUK6C3R3-75C datasheet.

Product details

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Features

AEC Q101 compliant.
High current handling capability, up to 320 A.
Low conduction losses due to very low on-state resistance.
Suitable for standard and logic level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Published: Aug 22, 2014 |