BUK6C2R1-55C Datasheet | NXP Semiconductors

D2 PA K N-channel Trench MOS intermediate level FET Rev. 3 - 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - High current handling capability, up to 320 A - Low conduction losses due to very low on-state resistance - Suitable for standard and logic level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V automotive systems - Electric and electro-hydraulic power steering - Motors, lamps and solenoids - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 90 A; Tj = 25 °C; see Figure 11 Min Typ 1.9 Max 55 228 300 2.3 Unit V A W mΩ Static characteristics NXP Semiconductors N-channel Trench MOS intermediate level FET Quick reference data …continued Parameter gate-drain charge Conditions ID = 180 A; VDS = 44 V; VGS = 10 V; see Figure 13; see Figure 14 ID = 120 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min Typ 79 Max Unit n C Table 1. Symbol QGD Dynamic characteristics Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 770 m J 2. Pinning...