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D2 PA K
BUK6C2R1-55C
N-channel TrenchMOS intermediate level FET
Rev. 3 — 18 January 2012 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant High current handling capability, up to 320 A Low conduction losses due to very low on-state resistance Suitable for standard and logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.
BUK6C2R1-55C Datasheet
