BUK6C3R3-75C
BUK6C3R3-75C is N-channel TrenchMOS intermediate level FET manufactured by NXP Semiconductors.
D2 PA K
N-channel TrenchMOS intermediate level FET
Rev. 3
- 18 January 2012 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotive applications.
1.2 Features and benefits
- AEC Q101 pliant
- High current handling capability, up to 320 A
- Low conduction losses due to very low on-state resistance
- Suitable for standard and logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C...
