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BUK7880-55A - N-channel TrenchMOS standard level FET

General Description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.

Key Features

  • I Very low on-state resistance I 150 °C rated I Q101 compliant I Standard level compatible 1.3.

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Full PDF Text Transcription (Reference)

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BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 — 1 November 2007 www.datasheet4u.com Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 150 °C rated I Q101 compliant I Standard level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V and 24 V loads 1.4 Quick reference data I EDS(AL)S ≤ 53 mJ I ID ≤ 7 A I RDSon = 68 mΩ (typ) I Ptot ≤ 8 W 2. Pinning information Table 1.