BUK7880-55 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device Features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 7.5 1.8 150 80 UNIT V A W ˚C mΩ PINNING - SOT223 PIN...