Datasheet Summary
N-channel TrenchMOS standard level FET
Rev. 01
- 1 November 2007
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Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance I 150 °C rated I Q101 pliant I Standard level patible
1.3 Applications
I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V and 24 V loads
1.4 Quick reference data
I EDS(AL)S ≤ 53 mJ I ID ≤ 7 A I RDSon = 68 mΩ (typ) I Ptot ≤ 8 W
2. Pinning information
Table 1. Pin 1 2 3 4 Pinning Description...
