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BUK7E07-55B - N-channel TrenchMOS standard level FET

General Description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in Automotive critical applications.

Key Features

  • I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible 1.3.

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Full PDF Text Transcription for BUK7E07-55B (Reference)

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BUK7E07-55B N-channel TrenchMOS standard level FET Rev. 01 — 29 January 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description N-channel en...

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duct data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive critical applications. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V and 24 V loads 1.4 Quick reference data I EDS(AL)S ≤ 351 mJ I ID ≤ 75 A I RDSon = 5.8 mΩ

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