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BUK7E11-55B - TRENCHMOS-TM STANDARD LEVEL FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible. 1.3.

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Datasheet Details

Part number BUK7E11-55B
Manufacturer NXP Semiconductors
File Size 327.53 KB
Description TRENCHMOS-TM STANDARD LEVEL FET
Datasheet download datasheet BUK7E11-55B Datasheet

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Full PDF Text Transcription

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BUK75/76/7E11-55B TrenchMOS™ standard level FET Rev. 02 — 11 November 2003 www.DataSheet4U.com Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 173 mJ s ID ≤ 75 A s RDSon = 9.9 mΩ (typ) s Ptot ≤ 157 W. 2.
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