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BUK7E07-55B
N-channel TrenchMOS standard level FET
Rev. 01 — 29 January 2008
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Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive critical applications.
1.2 Features
I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible
1.3 Applications
I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V and 24 V loads
1.4 Quick reference data
I EDS(AL)S ≤ 351 mJ I ID ≤ 75 A I RDSon = 5.8 mΩ (typ) I Ptot ≤ 203 W
2. Pinning information
Table 1.
BUK7E07-55B Datasheet
