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BUK9E04-30B - N-Channel MOSFET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Key Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

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Full PDF Text Transcription (Reference)

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BUK9E04-30B TrenchMOS™ logic level FET Rev. 01 — 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.3 J s ID ≤ 75 A s RDSon = 3.4 mΩ (typ) s Ptot ≤ 254 W. 2.