BUK9E3R2-40E
BUK9E3R2-40E is N-channel TrenchMOS logic level FET manufactured by NXP Semiconductors.
11 September 2012
N-channel Trench MOS logic level FET
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT226 package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
- AEC Q101 pliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C 1.3 Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
[1]
Min
- Typ
- Max 40 100 234
Unit V A W
Static characteristics drain-source on-state resistance gate-drain charge 2.7 3.2 mΩ
Dynamic characteristics QGD VGS = 5 V; ID = 25 A; VDS = 32 V; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
- 25.8
- n C
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NXP Semiconductors
N-channel Trench MOS logic level...
