BUK9E04-30B
BUK9E04-30B is N-Channel MOSFET manufactured by NXP Semiconductors.
Trench MOS™ logic level FET
Rev. 01
- 14 November 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive Trench MOS™ technology.
1.2 Features s Very low on-state resistance s 175 °C rated s Q101 pliant s Logic level patible.
1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching.
1.4 Quick reference data s EDS(AL)S ≤ 1.3 J s ID ≤ 75 A s RDSon = 3.4 mΩ (typ) s Ptot ≤ 254 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT226 simplified outline and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) g s mb d
Simplified outline
Symbol
MBB076
1 2 3
MBK112
SOT226 (I2-PAK)
Philips Semiconductors
Trench MOS™ logic level FET
3. Ordering information
Table 2: Ordering information Package Name BUK9E04-30B I2-PAK Description Plastic single-ended package (Philips version of TO-220AB I2-PAK); low-profile 3 lead Version SOT226 Type number
4. Limiting values
Table 3: Limiting values In accordance with the...
