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BUK9E04-30B
TrenchMOS™ logic level FET
Rev. 01 — 14 November 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 1.3 J s ID ≤ 75 A s RDSon = 3.4 mΩ (typ) s Ptot ≤ 254 W.
2.
BUK9E04-30B Datasheet
