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BUK9E06-55A Datasheet

TrenchMOS logic level FET

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BUK9E06-55A pdf
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BUK9506-55A; BUK9606-55A;
BUK9E06-55A
TrenchMOS™ logic level FET
Rev. 03 — 23 July 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK);
BUK9E06-55A in SOT226 (I2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Logic level compatible.
3. Applications
s Automotive and general purpose power switching:
c
c x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb mb
mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
123
MBK112
SOT226 (I2-PAK)
Symbol
g
MBB076
d
s


NXP Semiconductors Electronic Components Datasheet

BUK9E06-55A Datasheet

TrenchMOS logic level FET

No Preview Available !

BUK9E06-55A pdf
Philips Semiconductors
BUK9506-55A; BUK9606-55A;www.DataSheet4U.com
BUK9E06-55A
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
Tj = 25 °C; VGS = 5 V; ID = 25 A
Tj = 25 °C; VGS = 4.5 V; ID = 25 A
Tj = 25 °C; VGS = 10 V; ID = 25 A
Typ
[1]
5.3
5.5
4.8
Max Unit
55 V
154 A
300 W
175 °C
6.3 m
6.7 m
5.8 m
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 k
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
IDR reverse drain current (DC)
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
Tmb = 25 °C; Figure 1
Tmb = 25 °C
IDRM
pulsed reverse drain current
Avalanche ruggedness
WDSS non-repetitive avalanche energy
Tmb = 25 °C; pulsed; tp 10 µs
unclamped inductive load; ID = 75 A;
VDS 55 V; VGS = 5 V; RGS = 50 ;
starting Tmb = 25 °C
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
Min
[1]
[2]
[2]
55
55
[1]
[2]
Max Unit
55 V
55 V
±15 V
154 A
75 A
75 A
616 A
300
+175
+175
W
°C
°C
154 A
75 A
616 A
1.1 J
9397 750 08416
Product data
Rev. 03 — 23 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
2 of 16


Part Number BUK9E06-55A
Description TrenchMOS logic level FET
Maker NXP Semiconductors
Total Page 17 Pages
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