Datasheet4U Logo Datasheet4U.com

CGY1047 - 27 dB gain GaAs push-pull amplifier

General Description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

Key Features

  • I I I I I I I I Excellent linearity, stability and reliability Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermally optimized design Superior levels of ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Integrated ring wave surge protection 1.3.

📥 Download Datasheet

Full PDF Text Transcription for CGY1047 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CGY1047. For precise diagrams, and layout, please refer to the original PDF.

CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier Rev. 01 — 30 July 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Hybrid amplifier ...

View more extracted text
data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies. 1.2 Features I I I I I I I I Excellent linearity, stability and reliability Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermally optimized design Superior levels of ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Integrated ring wave surge protection 1.3 Applications I CATV s

More Datasheets from NXP Semiconductors

Part Number Description
CGY1041 1 GHz - 21 dB gain GaAs push-pull amplifier
CGY1043 1 GHz - 23 dB gain GaAs push-pull amplifier
CGY1032 1 GHz - 32 dB gain GaAs push-pull amplifier