Datasheet Summary
SO T6
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
Rev. 1
- 12 August 2011 Product data sheet
1. Product profile
1.1 General description plementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)
- AEC-Q101 qualified
1.3 Applications
- Level shifter
- Power supply converter
- Load switch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID VDS VGS ID RDSon Quick...
