Datasheet Summary
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
28 December 2022
Product data sheet
1. General description plementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)
3. Applications
- Level shifter
- Power supply converter
- Loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel)
VDS drain-source voltage Tj =...
