NX1029X Description
plementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
NX1029X Key Features
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)
- AEC-Q101 qualified