NX1029X - MOSFET

Description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Logic-level compatible.
Very fast switching.
Trench MOSFET technology.
ESD protection up to 2 kV (N-channel) and 1 kV (P-channel).
AEC-Q101 qualified 1.3.

NXP Semiconductors

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Datasheet Details

Part number	NX1029X
Manufacturer	NXP Semiconductors
File Size	950.24 KB
Description	MOSFET
Datasheet	NX1029X Datasheet
Additional preview pages of the NX1029X datasheet.

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Full PDF Text Transcription

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SO T6 NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)  AEC-Q101 qualified 1.3 Applications  Level shifter  Power supply converter  Load switch  Switching circuits 1.4 Quick reference data Table 1.

Published: Aug 25, 2014 |