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NX2301P - 2A P-Channel Trench MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3.

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NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ „ „ „ 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = −4.