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NX3008CBKV - MOSFET

General Description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV.
  • AEC-Q101 qualified 1.3.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SO T6 NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET Rev. 1 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Level shifter  Power supply converter  Load switch  Switching circuits 1.4 Quick reference data Table 1.