Datasheet4U Logo Datasheet4U.com

NX3008NBKMB - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Very fast switching.
  • Low threshold voltage.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV.
  • Ultra thin package profile with 0.37 mm height 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NX3008NBKMB MOSFET NXP Semiconductors
NX3008NBK MOSFET NXP
NX3008NBKS 350mA dual N-channel Trench MOSFET NXP Semiconductors
NX3008NBKT MOSFET NXP Semiconductors
NX3008NBKV MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
NX3008NBK N-channel MOSFET
NX3008NBKS dual N-channel MOSFET
NX3008NBKV Dual N-channel MOSFET
NX3008NBKW N-channel MOSFET
NX3008CBKS N/P-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NX3008NBKMB 30 V, single N-channel Trench MOSFET 5 November 2022 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ESD protection up to 2 kV • Ultra thin package profile with 0.37 mm height 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.