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NX3008NBKS - Dual N-channel Trench MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 350mA.
  • RDS(ON) < 1.4Ω @ VGS = 4.5V.
  • Very fast switching.
  • Low threshold voltage.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV D1 D2 G1 G2 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1 S1 S2.
  • Absolute Maximum Ratings (TJ = 25℃, unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±8 Continuous Drain Current (Note 1) Ta = 25℃ Ta = 100℃ 250 ID 230 Pulsed Drain Current (Single.

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SMD Type TraMnOsiSsFtoErsT Dual N-channel Trench MOSFET NX3008NBKS ■ Features ● VDS (V) = 30V ● ID = 350mA ● RDS(ON) < 1.4Ω @ VGS = 4.5V ● Very fast switching ● Low threshold voltage ● Trench MOSFET technology ● ESD protection up to 2 kV D1 D2 G1 G2 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1 S1 S2 ■ Absolute Maximum Ratings (TJ = 25℃, unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±8 Continuous Drain Current (Note 1) Ta = 25℃ Ta = 100℃ 250 ID 230 Pulsed Drain Current (Single pulse; tp≤10µs) IDM 1.