NX3008NBKW
NX3008NBKW is MOSFET manufactured by NXP Semiconductors.
SO T3
30 V, 350 m A N-channel Trench MOSFET
Rev. 1
- 2 August 2011 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ESD protection up to 2 k V
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 m A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8
- Typ 1
Max 30 8 350 1.4
Unit V V m A Ω
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP...
