NX3008PBKS
NX3008PBKS is MOSFET manufactured by NXP Semiconductors.
30 V, 200 m A dual P-channel Trench MOSFET
Rev. 1
- 1 August 2011 Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ESD protection up to 2 k V
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -200 m A; Tj = 25 °C
[1]
Quick reference data Parameter Conditions Tj = 25 °C Min -8 Typ Max Unit -30 8 V V
-200 m A
Static characteristics (per transistor) RDSon drain-source on-state resistance 2.8 4.1 Ω
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
30 V, 200 m A dual P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1
1 2...
