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NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology
ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver
High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C VGS gate-source voltage
ID
drain current
VGS = -4.
NX3008PBKV Datasheet
