NX3008PBKV
NX3008PBKV is dual P-channel MOSFET manufactured by Nexperia.
30 V, 220 m A dual P-channel Trench MOSFET
Rev. 1
- 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ESD protection up to 2 k V
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon drain-source on-state VGS = -4.5 V; ID = -200 m A; resistance
Tj = 25...
