NX3008PBK Datasheet | NXP Semiconductors

SO T2 30 V, 230 m A P-channel Trench MOSFET Rev. 1 - 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits - Very fast switching - Low threshold voltage - Trench MOSFET technology - ESD protection up to 2 k V - AEC-Q101 qualified 1.3 Applications - Relay driver - High-speed line driver - High-side loadswitch - Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -200 m A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 2.8 Max -30 8 -230 4.1 Unit V V m A Ω Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP...