NX3008PBKMB
NX3008PBKMB is MOSFET manufactured by NXP Semiconductors.
83B
30 V, single P-channel Trench MOSFET
Rev. 1
- 11 May 2012 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
T8
1.2 Features and benefits
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ESD protection up to 2 k V
- Ultra thin package profile with 0.37 mm height
1.3 Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -200 m A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8
- Typ 2.8
Max -30 8 -300 4.1
Unit V V m A Ω
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1...
