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NX3008PBKMB - P-channel MOSFET

Datasheet Summary

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Very fast switching.
  • Low threshold voltage.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV.
  • Ultra thin package profile with 0.37 mm height 1.3.

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Datasheet Details

Part number NX3008PBKMB
Manufacturer nexperia
File Size 1.59 MB
Description P-channel MOSFET
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Full PDF Text Transcription

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NX3008PBKMB 30 V, single P-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  Ultra thin package profile with 0.37 mm height 1.
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