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NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology
ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver
High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.
NX3008PBKW Datasheet
