Nexperia NX3008PBKW
P-channel MOSFET
FEATURES AND BENEFITS
● Very fast switching● Low threshold voltage
● Trench MOSFET technology
● ESD protection up to 2 kV
● AEC-Q101 qualified 1.3
APPLICATIONS
● Relay driver● High-speed line driver
● High-side loadswitch
● Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -200 mA; Tj = 25 °C Min Typ Max Unit - - -30 V -8 - 8 V [1] - - -200 mA - 2.8 4.1 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated