NX3008PBKW
NX3008PBKW is MOSFET manufactured by NXP Semiconductors.
SO T3
30 V, 200 m A P-channel Trench MOSFET
Rev. 1
- 1 August 2011 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ESD protection up to 2 k V
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -200 m A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8
- Typ 2.8
Max Unit -30 8 V V
-200 m A 4.1 Ω
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP...
