NX3008PBK - P-channel MOSFET

Datasheet Summary

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Very fast switching.
Low threshold voltage.
Trench MOSFET technology.
ESD protection up to 2 kV.
AEC-Q101 qualified 1.3.

nexperia

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Datasheet Details

Part number	NX3008PBK
Manufacturer	nexperia
File Size	1.56 MB
Description	P-channel MOSFET
Datasheet	NX3008PBK Datasheet
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NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.

Published: Jul 28, 2019 |