Datasheet Summary
SO T6
30 V, 400 mA dual N-channel Trench MOSFET
Rev. 1
- 1 August 2011 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ESD protection up to 2 kV
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage...
