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PBHV8560Z - 0.5 A NPN high-voltage low VCEsat (BISS) transistor

Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

2.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability.
  • High collector current gain hFE at high IC.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBHV8560Z
Manufacturer NXP Semiconductors
File Size 207.77 KB
Description 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Datasheet download datasheet PBHV8560Z Datasheet
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SOT223 PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC • AEC-Q101 qualified 3. Applications • Electronic ballast for fluorescent lighting • LED driver for LED chain module • LCD backlighting • High Intensity Discharge (HID) front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1.
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