Datasheet Summary
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
13 March 2015
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP plement: PBHV9560Z
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability
- High collector current gain hFE at high IC
- AEC-Q101 qualified
3. Applications
- Electronic ballast for fluorescent lighting
- LED driver for LED chain module
- LCD backlighting
- High Intensity Discharge (HID) front lighting
- Automotive motor management
- Hook switch for...
