Datasheet4U Logo Datasheet4U.com

PBHV8560Z - 0.5 A NPN high-voltage low VCEsat (BISS) transistor

General Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability.
  • High collector current gain hFE at high IC.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SOT223 PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC • AEC-Q101 qualified 3. Applications • Electronic ballast for fluorescent lighting • LED driver for LED chain module • LCD backlighting • High Intensity Discharge (HID) front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1.