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PBHV9560Z - 0.5 A PNP high-voltage low VCEsat (BISS) transistor

Datasheet Summary

Description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

2.

Features

  • High voltage.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC.
  • High collector current gain hFE at high IC.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBHV9560Z
Manufacturer NXP Semiconductors
File Size 209.41 KB
Description 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Datasheet download datasheet PBHV9560Z Datasheet
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SOT223 PBHV9560Z 600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 12 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8560Z 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC • High collector current gain hFE at high IC • AEC-Q101 qualified 3. Applications • Electronic ballast for fluorescent lighting • LED driver for LED chain module • LCD backlighting • HID front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1.
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