Datasheet Summary
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
12 August 2014
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN plement: PBHV8560Z
2. Features and benefits
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC
- High collector current gain hFE at high IC
- AEC-Q101 qualified
3. Applications
- Electronic ballast for fluorescent lighting
- LED driver for LED chain module
- LCD backlighting
- HID front lighting
- Automotive motor management
- Hook switch for wired...
