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PBHV9560Z Datasheet 0.5 A PNP High-voltage Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: SOT223 PBHV9560Z 600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 12 August 2014 Product data sheet 1.

General Description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBHV8560Z 2.

Key Features

  • High voltage.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC.
  • High collector current gain hFE at high IC.
  • AEC-Q101 qualified 3.

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