PBSS5130T Datasheet - NXP Semiconductors

PNP Transistor

PBSS5130T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETS in specific applications.

PBSS5130T General Description

PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. *30 *1 *1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. Top view 2 1 2 MAM256 MARKING TYPE NUMBER PBSS5.

PBSS5130T Datasheet (193.63 KB)

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Datasheet Details

Part number:

PBSS5130T

Manufacturer:

NXP ↗ Semiconductors

File Size:

193.63 KB

Description:

Pnp transistor.
DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product speciﬁca.

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PBSS5130T PNP Transistor NXP Semiconductors

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PBSS5130T Features

PBSS5130T General Description

Datasheet Details

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