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PBSS5130T Datasheet PNP Transistor

Manufacturer: NXP Semiconductors

General Description

PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX.

−30 −1 −1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package.

Top view 2 1 2 MAM256 MARKING TYPE NUMBER PBSS5130T Note 1.

Overview

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 12 Philips Semiconductors www.DataSheet4U.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.
  • Cost effective alternative to.