* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS9110Z Datasheet (231.84 KB)
PBSS9110Z
NXP ↗ Semiconductors
231.84 KB
1a pnp low vcesat (biss) transistor.
PBSS9110Z 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 11 December 2009 www.DataSheet4U.com Product data sheet 1. Product profile .
📁 Related Datasheet
PBSS9110AS 1A PNP low VCEsat (BISS) transistor (NXP)
PBSS9110D PNP transistor (NXP)
PBSS9110T PNP low VCEsat (BISS) transistor (NXP)
PBSS9110X PNP Transistor (NXP)
PBSS9110Y PNP Transistor (NXP)
PBSS9410PA 2.7 A PNP low VCEsat (BISS) transistor (NXP)
PBSS2515E 0.5A NPN transistor (NXP)
PBSS2515F low VCEsat NPN transistor (NXP)
PBSS2515M NPN transistor (nexperia)
PBSS2515MB NPN transistor (nexperia)
