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PMDPB65UP - Dual P-Channel MOSFET

General Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Trench MOSFET technology.
  • 1.8 V RDSon rated for low voltage gate drive.
  • 1 kV ElectroStatic Discharge (ESD) protection.
  • Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm.
  • Exposed drain pad for excellent thermal conduction 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Trench MOSFET technology  1.8 V RDSon rated for low voltage gate drive  1 kV ElectroStatic Discharge (ESD) protection  Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm  Exposed drain pad for excellent thermal conduction 1.