Datasheet4U Logo Datasheet4U.com

PMDPB65UP - Dual P-Channel MOSFET

Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Trench MOSFET technology.
  • 1.8 V RDSon rated for low voltage gate drive.
  • 1 kV ElectroStatic Discharge (ESD) protection.
  • Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm.
  • Exposed drain pad for excellent thermal conduction 1.3.

📥 Download Datasheet

Datasheet preview – PMDPB65UP

Datasheet Details

Part number PMDPB65UP
Manufacturer NXP Semiconductors
File Size 202.95 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet PMDPB65UP Datasheet
Additional preview pages of the PMDPB65UP datasheet.

📁 Similar Datasheet

Other Datasheets by NXP Semiconductors

Full PDF Text Transcription

Click to expand full text
PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Trench MOSFET technology  1.8 V RDSon rated for low voltage gate drive  1 kV ElectroStatic Discharge (ESD) protection  Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm  Exposed drain pad for excellent thermal conduction 1.
Published: |