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PMDPB65UP Datasheet

Dual P-Channel MOSFET

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PMDPB65UP
20 V, 3.5 A dual P-channel Trench MOSFET
Rev. 2 — 8 March 2011
Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small
and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Trench MOSFET technology
1.8 V RDSon rated for low voltage gate
drive
1 kV ElectroStatic Discharge (ESD)
protection
Small and leadless ultra thin SMD
plastic package: 2 × 2 × 0.65 mm
Exposed drain pad for excellent
thermal conduction
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Small brushless DC motor drive
Power management in battery-driven
portables
Hard disk and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Per transistor
VDS
drain-source
Tamb = 25 °C
voltage
VGS gate-source
voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon
drain-source
on-state
resistance
VGS = -4.5 V; ID = -1 A;
tp 300 µs; δ ≤ 0.01 ;
Tj = 25 °C
Min Typ Max Unit
--
-8 -
[1] -
-
-20 V
8V
-3.5 A
- 58 70 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.


NXP Semiconductors Electronic Components Datasheet

PMDPB65UP Datasheet

Dual P-Channel MOSFET

No Preview Available !

NXP Semiconductors
PMDPB65UP
20 V, 3.5 A dual P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
S1 source 1
G1 gate 1
D2 drain 2
S2 source 2
G2 gate 2
D1 drain 1
D1 drain 1
D2 drain 2
Simplified outline
654
78
123
Transparent top view
SOT1118 (HUSON6)
Graphic symbol
1
2
3, 8
6, 7
5
4
017aaa062
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMDPB65UP
HUSON6
4. Marking
Description
plastic thermal enhanced ultra thin small outline package;
no leads; 6 terminals
Version
SOT1118
Table 4. Marking codes
Type number
PMDPB65UP
5. Limiting values
Marking code
1C
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tamb = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
[1]
[1]
[2]
[1]
Min Max Unit
- -20 V
-8 8
V
- -3.5 A
- -2.7 A
- -20 A
- 520 mW
- 1.25 W
- 8.3 W
PMDPB65UP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 March 2011
© NXP B.V. 2011. All rights reserved.
2 of 15


Part Number PMDPB65UP
Description Dual P-Channel MOSFET
Maker NXP Semiconductors
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