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PMDPB95XNE Datasheet MOSFET

Manufacturer: NXP Semiconductors

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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Overview

PMDPB95XNE 26 September 2012 30 V dual N-channel Trench MOSFET Product data sheet 1.

Product profile 1.

Key Features

  • Very fast switching.
  • Trench MOSFET technology.
  • Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm.
  • Exposed drain pad for excellent thermal conduction.
  • ESD protection up to 1.8 kV 1.3.