PMDPB95XNE2
PMDPB95XNE2 is dual N-channel MOSFET manufactured by Nexperia.
description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Very fast switching
- Trench MOSFET technology
- Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Eletro Static Discharge (ESD) protection > 2 k V HBM
3. Applications
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disk and puting power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
Static characteristics (per transistor)
RDSon drain-source on-state VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C resistance
Min Typ Max Unit
--
-12
- [1]
- -
30 V 12 V 3A
- 77 99 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
30 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2
Simplified...
